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MS10N65 - N-Channel MOSFET

General Description

low on-resistance and cost effectiveness.

Key Features

  • BVDSS=700V typically @ Tj=150°C.
  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package.

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Datasheet Details

Part number MS10N65
Manufacturer Bruckewell
File Size 837.06 KB
Description N-Channel MOSFET
Datasheet download datasheet MS10N65 Datasheet

Full PDF Text Transcription for MS10N65 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MS10N65. For precise diagrams, and layout, please refer to the original PDF.

MS10N65 N-Channel Enhancement Mode Power MOSFET Description The MS10N65 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s...

View more extracted text
ode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

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