MS10N65 Description
The MS10N65 is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications.
MS10N65 Key Features
- BVDSS=700V typically @ Tj=150°C
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- RoHS pliant package
- Power Factor Correction
- LCD TV Power
- Full and Half Bridge Power