Description
The MS10N65SJ is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, super junction device design, low on-resistance and cost effectiveness.
Features
- Low RDS(on).
- Ultra Low Gate Charge.
- High dv/dt capability.
- High Unclamped Inductive Switching (UIS) capability.
- High peak current capability.
- Increased transconductance performance.
- Optimized design for high performance power systems
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Parameter Continuous drain current Pulsed drain current Avalanche energy, single pulse Avalanche current, repetitive
MOSFET dv/dt ruggedness G.
MS10N65SJ Datasheet
