MS10N65SJ - N-Channel MOSFET

Product Overview

Bruckewell

Datasheet Details

Part number	MS10N65SJ
Manufacturer	Bruckewell
File Size	738.66 KB
Description	N-Channel MOSFET
Datasheet	MS10N65SJ Datasheet
Additional preview pages of the MS10N65SJ datasheet.

Product details

Description

The MS10N65SJ is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, super junction device design, low on-resistance and cost effectiveness.

Features

Low RDS(on).
Ultra Low Gate Charge.
High dv/dt capability.
High Unclamped Inductive Switching (UIS) capability.
High peak current capability.
Increased transconductance performance.
Optimized design for high performance power systems Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Continuous drain current Pulsed drain current Avalanche energy, single pulse Avalanche current, repetitive MOSFET dv/dt ruggedness G.

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Published: Jun 1, 2016 |