MS10N65 - N-Channel MOSFET

Bruckewell

General Description

low on-resistance and cost effectiveness.

Key Features

BVDSS=700V typically @ Tj=150°C.
Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package.

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MS10N65 n-channel mosfet by Bruckewell - Datasheet Preview

Datasheet Details

Part number	MS10N65
Manufacturer	Bruckewell
File Size	837.06 KB
Description	N-Channel MOSFET
Datasheet	MS10N65 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MS10N65 N-Channel Enhancement Mode Power MOSFET Description The MS10N65 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.