Datasheet Details
| Part number | MSF8N80-G |
|---|---|
| Manufacturer | Bruckewell Technology |
| File Size | 790.09 KB |
| Description | 800V N-Channel MOSFET |
| Datasheet |
 MSF8N80-G Datasheet
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General Description
This Power MOSFET is produced using the advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have high rugged avalanche characteristics.
Key Features
- RDS(on) (typ 1.3 Ω )@VGS=10V.
- Gate Charge (Typical 39nC).
- Improved dv/dt Capability, High Ruggedness.
- 100% Avalanche Tested.
- Maximum Junction Temperature Range (150°C).
- Halogen Free Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current (Tc=25°C unless otherwise specified) Parameter Value 800 8 5.0 32 ±30 850 17.8 4.5 59 - Derate above 25℃ 0.48.
- 55.