MSF8N80-G mosfet equivalent, 800v n-channel mosfet.
* RDS(on) (typ 1.3 Ω )@VGS=10V
* Gate Charge (Typical 39nC)
* Improved dv/dt Capability, High Ruggedness
* 100% Avalanche Tested
* Maximum Junction Te.
are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic appl.
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