CS2305 mosfet equivalent, p-channel trench power mosfet.
* VDS = -20V,ID =-4.1A RDS(ON) < 50mΩ @ VGS =-4.5V RDS(ON) < 70mΩ @ VGS =-2.5V
* High Power and current handing capability
* Lead free product is acquired
The CS2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.
Features
* VDS =.
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