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CSD30N30
N-Channel Trench Power MOSFET
General Description
The CSD30N30 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.
Features
● VDS = 30V,ID =110A RDS(ON) < 4mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =4.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Application
● PWM applications ● Load switch ● Power management
100% UIS TESTED! 100% ΔVds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
CSD30N30
CSD30N30
TO-252
Schematic Diagram
Marking and pin Assignment
TO-252(DPAK) top view
Reel Size 325mm
Tape width 16mm
Quantity 2500
Table 1.
CSD30N30 Datasheet
