CSD30N30 - N-Channel MOSFET

Datasheet Summary

Features

With To-252(DPAK) package.
Low input capacitance and gate charge.
Low gate input resistance.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	CSD30N30
Manufacturer	INCHANGE
File Size	203.61 KB
Description	N-Channel MOSFET
Datasheet	CSD30N30 Datasheet
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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor CSD30N30 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 110 78 440 PD Total Dissipation @TC=25℃ 107 Tj Max.

Published: Sep 3, 2020 |