CASS CSD30N30
The CSD30N30 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.| Part No. | CSD30N30 |
|---|---|
| Datasheet | CSD30N30 Download |
| Manufacturer | CASS |
| Description | N-Channel Trench Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● VDS = 30V,ID =110A RDS(ON) < 4mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =4.5V● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
● PWM applications
● Load switch
● Power management 100% UIS TESTED! 100% ΔVds TESTED! Package Marking and Ordering Information Device Marking Device Device Package CSD30N30 CSD30N30 TO-252 Schematic Diagram Marking and pin Assignment TO-252(DPAK) top view Reel Size 325mm Tape width 16mm Quantity 2500 Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) PD EAS Drain Current-Continuous(Tc=25℃) Drain Cu
