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2N2218 Datasheet Preview

2N2218 Datasheet

NPN SILICON PLANAR SWITCHING TRANSISTORS

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2218
2N2219
TO-39
Metal Can Package
2N2218 TO 2N2222 Are NPN Silicon Small Signal General Purpose Amplifier And Switch
Switching and Linear Application DC and VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
2N2218, 19
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25ºC
Derate Above 25ºC
VCEO
VCBO
VEBO
IC
PD
30
60
5
800
800
4.57
Power Dissipation @ Tc=25ºC
PD
3
Derate Above 25ºC
17.1
Operating and Storage Junction
Tj, Tstg
-65 to +200
Temperature Range
UNIT
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Leakage Current
BVCEO
BVCBO
BVEBOf
ICBO
IC=10mA,IB=0
IC=10µA.IE=0
IE=10µA, IC=0
VCB=50V, IE=0
VALUE
MIN MAX
30
60
5
10
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
VCE(Sat)*
VBE(Sat)*
VCB=50V, IE=0
Ta=150 º C
IC=150mA,IB=15mA
IC=500mA,IB=50mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
10
0.4
1.6
0.6 1.3
2.6
UNIT
V
V
V
nA
µA
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4




CDIL

2N2218 Datasheet Preview

2N2218 Datasheet

NPN SILICON PLANAR SWITCHING TRANSISTORS

No Preview Available !

NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2218
2N2219
TO-39
Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
DC Current Gain
DYNAMIC CHARACTERISTICS
hFE IC=0.1mA,VCE=10V*
IC=1mA,VCE=10V
IC=10mA,VCE=10V*
IC=150mA,VCE=1V*
IC=150mA,VCE=1V*
IC=500mA,VCE=10V*
2N2218
MIN MAX
20
25
35
20
40 120
20
2N2219
MIN MAX
35
50
75
50
100 300
30
UNIT
Transition Frequency
fT IC=20mA, VCE=20V
250
250
MHz
f=100MHz
Output Capacitance
Cob VCB=10V, IE=0
f=100KHz
8 8 pF
Input Capacitance
Cib VEB=0.5V, IC=0
f=100kHz
30 30 pF
SWITCHING CHARACTERISTICS
Delay time
Rise time
Storage time
Fall time
td
IC=150mA,IB1=15mA
tr VCC=30V,VBE(off)=0.5V
ts
IC=150mA, IB1=15mA
tf IB2=15mA, VCC=30V
*Pulse Condition: Pulse Width <300µs, Duty Cycle <2%
10 ns
25 ns
225 ns
60 ns
Continental Device India Limited
Data Sheet
Page 2 of 4


Part Number 2N2218
Description NPN SILICON PLANAR SWITCHING TRANSISTORS
Maker CDIL
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2N2218 Datasheet PDF






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