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2N3868 Datasheet Preview

2N3868 Datasheet

PNP SILICON POWER SWITCHING TRANSISTOR

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON POWER SWITCHING TRANSISTOR
2N3868
TO-39
Metal Can Package
Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current
Power Dissipation at Tc=25ºC
Derate Above 25ºC
Power Dissipation at Ta=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
IB
PD
PD
Tj, Tstg
VALUE
60
60
4.0
3.0
10
0.5
6.0
34.3
1.0
5.71
- 65 to +200
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
Rth (j-c)
Rth (j-a)
29
175
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
Collector Cut off Current
DC Current Gain
SYMBOL
VCEO
VCBO
VEBO
ICEX
ICBO
*hFE
Collector Emitter Saturation Voltage
*VCE (sat)
Base Emitter Saturation Voltage
*VBE (sat)
TEST CONDITION
IC=1mA, IB=0
IC=100µA, IE=0
IE=100µA, IC=0
VCE=60V, VBE (off)=2V
VCB=60V, IE=0,Tc=150ºC
IC=500mA, VCE=1V
IC=1.5A, VCE=2V
IC=2.5A, VCE=3V
IC=3A, VCE=5V
IC=500mA, IB=50mA
IC=1.5A, IB=150mA
IC=2.5A, IB=250mA
IC=500mA, IB=50mA
IC=1.5A, IB=150mA
IC=2.5A, IB=250mA
MIN
60
60
4.0
35
30
20
20
0.9
*Pulse Test: Pulse Width <300µs, Duty Cycle <2%
MAX
1.0
150
150
0.50
0.75
1.30
1.0
1.4
2.0
UNITS
V
V
V
A
A
A
W
mW/ ºC
W
mW/ ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
µA
µA
V
V
V
V
V
V
2N3868Rev031105E
Continental Device India Limited
Data Sheet
Page 1 of 4




CDIL

2N3868 Datasheet Preview

2N3868 Datasheet

PNP SILICON POWER SWITCHING TRANSISTOR

No Preview Available !

PNP SILICON POWER SWITCHING TRANSISTOR
2N3868
TO-39
Metal Can Package
ELECTRICAL CHARACTERISTICS (Tc=25º C unless specified otherwise)
DYNAMIC CHARACTERISTICS
DESCRIPTION
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
SYMBOL
**fT
Cob
Cib
TEST CONDITION
IC=100mA,VCE=5V, f=20MHz
VCB=10V, IE=0, f=0.1MHz
VEB=3V, IC=0, f=0.1MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
** fT = lhfel. ftest
2N3868Rev031105E
td VCC=30V, VBE(off)=0, IC=1.5A,
tr IB1=150mA
ts VCC=30V, IC=1.5A,
tf IB1=IB2=150mA
MIN
60
MAX
120
1000
35
65
325
75
UNITS
MHz
pF
pF
ns
ns
ns
ns
Continental Device India Limited
Data Sheet
Page 2 of 4


Part Number 2N3868
Description PNP SILICON POWER SWITCHING TRANSISTOR
Maker CDIL
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2N3868 Datasheet PDF






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