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2N4400 Datasheet Preview

2N4400 Datasheet

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
TO-92 Plastic Package
2N4400, 2N4401
2N4402, 2N4403
2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS
General Purpose Switching Applications
123
1 = EMITTER
2 = BASE
3 = COLLECTOR
EBC
DIM MIN
MAX
A
4,32
5,33
B
4,45
5,20
C
3,18
4,19
D
0,41
0,55
E
0,35
0,50
F 5 DEG
G
1,14
1,40
H
1,14
1,53
K 12,70 –
L 1.982 2.082
ALL DIMENSIONS IN M.M.
ABSOLUTE MAXIMM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Power Dissipation At Ta=25 ºC
Derate Above 25 ºC
Power Dissipation At Tc=25 ºC
Derate Above 25 ºC
Operating & Storage
Junction Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
Tj,Tstg
2N4400/01
40
2N4402/03 Units
40 V
60 40 V
6 5V
- 600
- mA
- 625
- mW
- 5.0
- mW/ºC
- 1.5
-W
- 12
- mW/ºC
-55 to +150
ºC
THERMAL RESISTANCE
Junction to Case
Rth (j-c)
- 83.3 -
Junction to Ambient
Rth (j-a)
- 200
-
ELECTRICAL CHARACTERISTICS (Ta =25 ºC unless otherwise specified)
ºC/W
ºC/W
Continental Device India Limited
Data Sheet
Page 1 of 6




CDIL

2N4400 Datasheet Preview

2N4400 Datasheet

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

No Preview Available !

2N4400, 2N4401
2N4402, 2N4403
Characteristic
Collector Emitter Voltage
IC=1mA, IB=0
Collector Base Voltage
IC=100µA, IE=0
Emitter Base Voltage
IE=100µA, IC=0
Base Cutoff Current
VCE=35V, VBE=0.4V
Collector Cutoff Current
VCE=35V, VBE=0.4V
Collector-Emitter
Saturation Voltage
IC=150mA, IB=15mA
IC=500mA, IB=50mA
Base-Emitter
Saturation Voltage
IC=150mA, IB=15mA
IC=500mA,IB=50mA
Symbol 2N4400/01 2N4402/03
BVCEO*
BVCBO
BVEBO
IBEV
ICEX
>40
>60
>6
<0.1
<0.1
>40
>40
>5
<0.1
<0.1
Unit
V
V
V
µA
µA
VCE (sat)*
<0.4
<0.75
<0.4
<0.75
V
V
VBE (sat)*
0.75 to 0.95 0.75 to 0.95
<1.2
<1.3
V
V
Characteristic
D C Current Gain
IC=0.1mA,VCE=1V
IC=1mA,VCE=1V
IC=10mA,VCE=1V
IC=150mA,VCE=1V*
IC=150mA,VCE=2V*
IC=500mA,VCE=2V*
Symbol 2N4400 2N4401 2N4402 2N4403 Unit
hFE
- >20
- >30
>20 >40
>30 >60
>40 >80
>50 >100
50-150 100-300
--
- - 50-150 100-300
>20 >40
>20 >20
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
IC=1mA, VCE=10V, f=1KHz hfe
Input Impedance
IC=1mA, VCE=10V, f=1KHz hie
20-250 40-500 30-250 60-500
0.5-7.5 1.0-15 0.75-7.5 1.5-15 K
Continental Device India Limited
Data Sheet
Page 2 of 6


Part Number 2N4400
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Maker CDIL
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2N4400 Datasheet PDF





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