2N5496
2N5496 is :: NPN PLASTIC POWER TRANSISTOR manufactured by Continental Device India.
DESCRIPTION
Collector Base Voltage (Open emitter) Collector Emitter Voltage(open base) Collector Emitter Voltage(Vbe=1.5) Collector Emitter Voltage(Rbe=100Ω) Emitter Base Voltage(open collector) Collector Current Continuous Base Current Power Dissipation upto Ta=25ºC Power Dissipation upto Tc=25ºC Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Case Junction to Ambient VALUE 90 70 90 80 5.0 7.0 3 1.8 50 150 -65 to +150 2.5 70 UNIT V V V V V A A W W ºC ºC ºC/W ºC/W
VCBO VCEO VCEV VCER VEBO IC IB PD PD Tj Tstg Rth (j-c) Rth (j-a)
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified) DESCRIPTION
SYMBOL TEST CONDITION VBE=0,VCE=85V, I Collector Cut off Current CEV VBE=1.5V VBE=0,VCE=85V, ICEV VBE=1.5V,TC=150 C VCE=70V,RBE=100W ICER VCE=70V,RBE=100W, ICER O Tc=150 C VEB=5V, IC=0 IEBO Emitter Cut off Current VCEO(sus)
- IC=100m A, IB=0 Breakdown sus voltages VCER(sus)
- IC=100m A, RBE=100W VCEV (sus)
- IC=100m A, VBE=1.5V IC=3.5A,VCE=4V VBE(on) Base Emitter on Voltage IC=3.5A, IB=3.5A VCE(sat)- Collector Emitter Saturation Voltage IC=3.5A,VCE=4V h FE
- DC Current Gain IC=500m A,VCE=4V f T Transition frequency SWITCHING TIME Vcc=30V,IC=3.5A, ton Turn on time IB1=IB2=0.35A Vcc=30V,IC=3.5A, toff Turn off time IB1=IB2=0.35A
- Pulse Test : Pulse duration =300us
MAX 1.0 5.0 0.5 3.5 1.0
UNIT m A m A m A m A m A V V V V V MHz µs µs
70 80 90 1.7 1.0 100 0.8
5.0 15
Continental Device India Limited
Data Sheet
Page 1 of 3
2N5496 TO-220 Plastic Package TO-220 Plastic Package
1 2 3
..
DIM MIN MAX 16.51 A 14.42 9.63 10.67 B 3.56 4.83 C
- 0.90 D 1.15 1.40 E 3.75 3.88 F 2.29 2.79 G 2.54 3.43 H
- 0.56 J 12.70 14.73 K 2.80 4.07 L 2.03 2.92 M
- 31.24 N 7 DEG O All diminsions in mm.
3 TO-220 Tube Packing
Label 536.00 ±1.5
Pin Configuration 1. Base 2. Collector 3. Emitter 4. Collector
End Pin...