2N5496 Datasheet

The 2N5496 is a NPN SILICON POWER TRANSISTORS.

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Part Number2N5496
ManufacturerCentral Semiconductor
Overview 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 . .
Part Number2N5496
Description(2N549x) Silicon NPN Power Transistor
ManufacturerThomson-CSF
Overview . .
Part Number2N5496
DescriptionSilicon NPN Transistor
ManufacturerNTE Electronics
Overview The 2N5496 is a silicon NPN transistors in a TO−220 type package designed for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 7 Amps: hFE = 2.3 . D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector
*Emitter Sustaining Voltage: VCEO(sus) = 70V Min D High Current
*Gain Bandwidth Product: fT = 4MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector
*Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . ..
Part Number2N5496
Description(2N549x) Silicon NPN Power Transistors
ManufacturerSaveniIC
Overview ·With TO-220 package ·High power dissipation APPLICATIONS ·For used in medium power and amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting. 0/5494 VCEO(SUS) Collector-emitter sustioning voltage 2N5492 2N5496 2N5490 Collector-emitter saturation voltage 2N5492 2N5494 2N5496 2N5490 2N5492 VBE Base-emitter on voltage 2N5494 2N5496 2N5492 ICEV Collector cut-off current 2N5490/5494 2N5496 ICER IEBO Collector cut-off current Emitter cut-off cu.