Datasheet Details
| Part number | 2N5496 |
|---|---|
| Manufacturer | CDIL |
| File Size | 188.54 KB |
| Description | :: NPN PLASTIC POWER TRANSISTOR |
| Datasheet | 2N5496_CDIL.pdf |
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Overview: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified pany NPN PLASTIC POWER TRANSISTOR 2N5496 TO-220 Plastic Package Medium Power Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) ..
| Part number | 2N5496 |
|---|---|
| Manufacturer | CDIL |
| File Size | 188.54 KB |
| Description | :: NPN PLASTIC POWER TRANSISTOR |
| Datasheet | 2N5496_CDIL.pdf |
|
|
|
Collector Base Voltage (Open emitter) Collector Emitter Voltage(open base) Collector Emitter Voltage(Vbe=1.5) Collector Emitter Voltage(Rbe=100Ω) Emitter Base Voltage(open collector) Collector Current Continuous Base Current Power Dissipation upto Ta=25ºC Power Dissipation upto Tc=25ºC Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Case Junction to Ambient VALUE 90 70 90 80 5.0 7.0 3 1.8 50 150 -65 to +150 2.5 70 UNIT V V V V V A A W W ºC ºC ºC/W ºC/W VCBO VCEO VCEV VCER VEBO IC IB PD PD Tj Tstg Rth (j-c) Rth (j-a) ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION VBE=0,VCE=85V, I Collector Cut off Current CEV VBE=1.5V VBE=0,VCE=85V, ICEV VBE=1.5V,TC=150 C VCE=70V,RBE=100W ICER VCE=70V,RBE=100W, ICER O Tc=150 C VEB=5V, IC=0 IEBO Emitter Cut off Current VCEO(sus) * IC=100mA, IB=0 Breakdown sus voltages VCER(sus) * IC=100mA, RBE=100W VCEV (sus) * IC=100mA, VBE=1.5V IC=3.5A,VCE=4V VBE(on) Base Emitter on Voltage IC=3.5A, IB=3.5A VCE(sat)* Collector Emitter Saturation Voltage IC=3.5A,VCE=4V hFE * DC Current Gain IC=500mA,VCE=4V fT Transition frequency SWITCHING TIME Vcc=30V,IC=3.5A, ton Turn on time IB1=IB2=0.35A Vcc=30V,IC=3.5A, toff Turn off time IB1=IB2=0.35A *Pulse Test : Pulse duration =300us MIN TYP MAX 1.0 5.0 0.5 3.5 1.0 UNIT mA mA mA mA mA V V V V V MHz µs µs 70 80 90 1.7 1.0 100 0.8 20 5.0 15 Continental Device India Limited Data Sheet Page 1 of 3 2N5496 TO-220 Plastic Package TO-220 Plastic Package B F C E 1 2 3 ..
J D G M 4 DIM MIN MAX 16.51 A 14.42 9.63 10.67 B 3.56 4.83 C — 0.90 D 1.15 1.40 E 3.75 3.88 F 2.29 2.79 G 2.54 3.43 H — 0.56 J 12.70 14.73 K 2.80 4.07 L 2.03 2.92 M — 31.24 N 7 DEG O All di
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2N5496 | NPN SILICON POWER TRANSISTORS | Central Semiconductor Corp | |
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2N5496 | Silicon NPN Transistor | NTE |
| SaveniIC | 2N5496 | (2N549x) Silicon NPN Power Transistors | SaveniIC |
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2N5496 | (2N549x) Silicon NPN Power Transistor | Thomson-CSF |
| Part Number | Description |
|---|---|
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| 2N5415 | (2N5415 / 2N5416) PNP SILICON HIGH VOLTAGE TRANSISTOR |
| 2N5086 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N5087 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N5088 | NPN SILICON EPITAXIAL TRANSISTORS |
| 2N5089 | NPN SILICON EPITAXIAL TRANSISTORS |
| 2N5294 | NPN PLASTIC POWER TRANSISTOR |
| 2N5296 | NPN PLASTIC POWER TRANSISTOR |
| 2N5298 | NPN PLASTIC POWER TRANSISTOR |
| 2N5320 | SILICON POWER SWITCHING TRANSISTORS |