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2N5496 Datasheet PDF

Continental Device India 2N5496

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.
Part No. 2N5496
Datasheet 2N5496 Download
Manufacturer
Continental Device India
Description :: NPN PLASTIC POWER TRANSISTOR
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2N5496 datasheet page 1 preview

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC)

DESCRIPTION

Collector Base Voltage (Open emitter) Collector Emitter Voltage(open base) Collector Emitter Voltage(Vbe=1.5) Collector Emitter Voltage(Rbe=100Ω) Emitter Base Voltage(open collector) Collector Current Continuous Base Current Power Dissipation upto Ta=25ºC Power Dissipation upto Tc=25ºC Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Case Junction to Ambient VALUE 90 70 90 80 5.0 7.0 3 1.8 50 150 -65 to +150 2.5 70 UNIT V V V V V A A W W ºC ºC ºC/W ºC/W VCBO VCEO VCEV VCER VEBO IC IB PD PD Tj Tstg Rth (j-c) Rth (j-a)

ELECTRICAL CHARACTERISTICS

(Tc=25ºC Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION VBE=0,VCE=85V, I Collector Cut off Current CEV VBE=1.5V VBE=0,VCE=85V, ICEV VBE=1.5V,TC=150 C VCE=70V,RBE=100W ICER VCE=70V,RBE=100W, ICER O Tc=150 C VEB=5V, IC=0 IEBO Emitter Cut off Current VCEO(sus) * IC=100mA, IB=0 Breakdown sus voltages VCER(sus) * IC=100mA, RBE=100W VCEV (sus) * IC=100mA,...
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