Datasheet4U Logo Datasheet4U.com

2N6430 - NPN SILICON TRANSISTORS

General Description

SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Total Device Dissipation @Ta=25ºC PD Derate Above 25ºC Total Device Dissipation @ Tc=25ºC PD Derate Above 25ºC Operating and Storage Junction Tj, Tstg Tempera

📥 Download Datasheet

Datasheet Details

Part number 2N6430
Manufacturer CDIL
File Size 145.79 KB
Description NPN SILICON TRANSISTORS
Datasheet download datasheet 2N6430 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON TRANSISTORS 2N6430, 6431 TO-18 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Total Device Dissipation @Ta=25ºC PD Derate Above 25ºC Total Device Dissipation @ Tc=25ºC PD Derate Above 25ºC Operating and Storage Junction Tj, Tstg Temperature Range 2N6430 2N6431 200 300 200 300 6 50 500 2.86 1.8 10.