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2N6430 - COMPLEMENTART SILICON TRANSISTOR

General Description

The CENTRAL SEMICONDUCTOR 2N6430 series devices are complementary small signal silicon transistors manufactured by the epitaxial planar process, designed for high voltage amplifier applications.

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📁 Similar Datasheet

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2N6430 NPN SILICON TRANSISTORS CDIL
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2N6431 NPN SILICON TRANSISTORS CDIL
2N6431 GENERAL PURPOSE TRANSISTOR Motorola

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2N6430 2N6431 NPN 2N6432 2N6433 PNP COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6430 series devices are complementary small signal silicon transistors manufactured by the epitaxial planar process, designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage (NPN) Emitter-Base Voltage (PNP) Continuous Collector Current Power Dissipation (TC=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 2N6430 2N6432 200 2N6431 2N6433 300 200 300 6.0 5.0 100 1.8 500 -65 to +200 0.35 97.