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2N6431 - GENERAL PURPOSE TRANSISTOR

Download the 2N6431 datasheet PDF. This datasheet also covers the 2N6430 variant, as both devices belong to the same general purpose transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N6430-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N6431 COMPLEMENTART SILICON TRANSISTOR Central Semiconductor
2N6431 NPN SILICON TRANSISTORS CDIL
2N6430 COMPLEMENTART SILICON TRANSISTOR Central Semiconductor Corp
2N6430 NPN SILICON TRANSISTORS CDIL
2N6432 COMPLEMENTART SILICON TRANSISTOR Central Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N6430 GENERAL PURPOSE TRANSISTOR
2N6432 GENERAL PURPOSE TRANSISTOR
2N6433 GENERAL PURPOSE TRANSISTOR
2N6426 Darlington Transistors
2N6427 Darlington Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a T"a = 25°C Derate above 25°C @Total Device Dissipation Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO v CBO VEBO ic PD 2N6430 2N6431 200 300 200 300 6.0 50 500 2.86 PD TJ' Tstg 1.8 10.3 -65 to +200 Unit Vdc Vdc Vdc mA mW mW/°C Watts mW/°C °c 2N6430 2N6431 CASE 22, STYLE 1 TO-18 (TO-206AA) GENERAL PURPOSE TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltaged) (IC = 1.0 mAdc, Ib = 0) 2N6430 2N6431 Collector-Base Breakdown Voltage dC = 0.