2N6439 Datasheet | HGSemi

HG Semiconductors The RF Line 2N6439HG RF POWER TRANSISTOR ROHS pliance,Silicon NPN POWER TRANSISTOR . . . designed primarily for wideband large- signal output amplifier stages in the 225 to 400 MHz frequency range. ω Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimum Gain = 7.8 d B @ 400 MHz ω Built- In Matching Network for Broadband Operation Using Double Match Technique ω 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR ω Gold Metallization System for High Reliability Applications 60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316- 01, STYLE 1 MAXIMUM RATINGS- Rating Symbol Value Unit Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Total Device Dissipation @ TC = 255C (1) Derate above 255C VCEO VCBO VEBO 146 0.83 Vdc Vdc Vdc Watts W/5C Storage Temperature Range THERMAL CHARACTERISTICS Tstg...