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2N6439 Datasheet PDF

HGSemi 2N6439

Silicon NPN POWER TRANSISTOR

2N6439 Specifications

  • Terminals : 6
  • Collector Base Voltage : 60V
  • Collector Emitter Voltage : 33V
  • Max Power Dissipation : 146W
  • Max Operating Temp : 200°C
Source: Octopart
Part No. 2N6439
Datasheet 2N6439 Download
Manufacturer
HGSemi
Description Silicon NPN POWER TRANSISTOR
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2N6439 datasheet page 1 preview

APPLICATIONS

60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316–01, STYLE 1

MAXIMUM RATINGS

* Rating Symbol Value Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Total Device Dissipation @ TC = 255C (1) Derate above 255C VCEO VCBO VEBO PD 33 60 4.0 146 0.83 Vdc Vdc Vdc Watts W/5C Storage Temperature Range THERMAL CHARACTERISTICS Tstg
2N6439 page 2 preview