HGSemi 2N6439
Silicon NPN POWER TRANSISTOR
2N6439 Specifications
- Terminals : 6
- Collector Base Voltage : 60V
- Collector Emitter Voltage : 33V
- Max Power Dissipation : 146W
- Max Operating Temp : 200°C
Source:
Octopart
APPLICATIONS
60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316–01, STYLE 1MAXIMUM RATINGS
* Rating Symbol Value Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Total Device Dissipation @ TC = 255C (1) Derate above 255C VCEO VCBO VEBO PD 33 60 4.0 146 0.83 Vdc Vdc Vdc Watts W/5C Storage Temperature Range THERMAL CHARACTERISTICS Tstg