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2N6439 - The RF Line NPN Silicon Power Transistor

Download the 2N6439 datasheet PDF. This datasheet also covers the 2N6439-MA variant, as both devices belong to the same the rf line npn silicon power transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N6439-MA-COM.pdf) that lists specifications for multiple related part numbers.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N6439 The RF Line NPN Silicon Power Transistor 60 W, 225 - 400 MHz, 28 V  Guaranteed performance in 225 to 400 MHz broadband amplifier @ 28 Vdc Output power = 60 W over 225 to 400 MHz band Minimum gain = 7.8 dB @ 400 MHz  Built–in matching network for broadband operation using double match technique  100% tested for load mismatch at all phase angles with 30:1 VSWR  Gold metallization system for high reliability applications Designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. Product Image Rev. V1 CASE 316–01, STYLE 1 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.