2N6439 Datasheet | Tyco Electronics

SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6439/D The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large- signal output amplifier stages in the 225 to 400 MHz frequency range. - Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimum Gain = 7.8 d B @ 400 MHz - Built- In Matching Network for Broadband Operation Using Double Match Technique - 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR - Gold Metallization System for High Reliability Applications 60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316- 01, STYLE 1 MAXIMUM RATINGS- Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO PD Tstg Value 33 60 4.0 146 0.83 - 65 to +200 Unit Vdc Vdc Vdc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.2 Unit °C/W ELECTRICAL CHARACTERISTICS- (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage (IC = 50 m Adc, IB = 0) Collector- Emitter Breakdown Voltage (IC = 50 m Adc, VBE = 0) Emitter- Base Breakdown Voltage (IE = 5.0 m Adc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICBO 33 60 4.0 - - - - - - - - 2.0 Vdc Vdc Vdc m Adc NOTE: (continued) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. - Indicates JEDEC Registered Data. ELECTRICAL CHARACTERISTICS- - continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) h FE 10 - 100 - DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob - 67 75 p...