MACOM Technology Solutions 2N6439
The RF Line NPN Silicon Power Transistor
2N6439 The RF Line NPN Silicon Power Transistor 60 W, 225 - 400 MHz, 28 V
● Guaranteed performance in 225 to 400 MHz broadband amplifier @ 28 Vdc Output power = 60 W over 225 to 400 MHz band Minimum gain = 7.8 dB @ 400 MHz
● Built–in matching network for broadband operation using double match technique
● 100% tested for load mismatch at all phase angles with 30:1 VSWR
● Gold metallization system for high reliability applications Designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. Product Image Rev. V1 CASE 316–01, STYLE 1 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: 2N6439 The RF Line NPN Silicon Power Transistor 60 W, 225 - 400 MHz, 28 V Rev. V1
● Guaranteed performance in 225 to 400 MHz broadband amplifier @ 28 Vdc Output power = 60 W over 225 to 400 MHz band Minimum gain = 7.8 dB @ 400 MHz
● Built–in matching network for broadband operation using double match technique
● 100% tested for load mismatch at all phase angles with 30:1 VSWR
● Gold metallization system for high reliability applications Designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. Product Image Rev. V1 CASE 316–01, STYLE 1 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: 2N6439 The RF Line NPN Silicon Power Transistor 60 W, 225 - 400 MHz, 28 V Rev. V1