Motorola 2N6439
60 W/ 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR
| Part No. | 2N6439 |
|---|---|
| Datasheet | 2N6439 Download |
| Manufacturer |  Motorola |
| Description | 60 W/ 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
2N6439 60 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON CASE 316–01, STYLE 1MAXIMUM RATINGS
* Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO PD Tstg Value 33 60 4.0 146 0.83 – 65 to + 200 Unit Vdc Vdc Vdc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.2 Unit °C/WELECTRICAL CHARACTERISTICS
* (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICBO 33 60 4.0 — — — — — — — — 2.0 Vdc Vdc Vdc mAdc NOTE: (continued) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. * Indicates JEDEC Registered Data.
