The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2N6439
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N6439 is a Common Emitter Device Designed For Large signal output amplifier stages in the 225-400 MHz range.
FEATURES INCLUDE:
• Internal Input Matching Network • 30:1 Load VSWR Capability • All Gold Metalization
MAXIMUM RATINGS
VCB 60 V
PDISS
146 W @ TC = 25 °C
TSTG θJC
-65 °C to +200 °C 1.2 °C/W
PACKAGE STYLE .500 6L FLG
1 = Collector 2 = Base 3 & 4 = Emitter
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM
BVCBO
IC = 50 mA
33
BVCES
IC = 50 mA
60
BVCBO
IE = 5.0 mA
4.0
hFE VCE = 5.0 V IC = 1.0 A
10
COB
VCB = 28 V
f = 1 MHz
GPe
VCE = 28 V
POUT = 60 W
f =225- 400 MHz 7.8
GPe 7.8
ηC
VCE = 28 V
POUT = 60 W
f = 400 MHz
55
Ψ 30:1
TYPICAL MAXIMUM
100 67 75 8.5 10.
2N6439 Datasheet
