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2N6439 Datasheet PDF

Advanced Semiconductor 2N6439

2N6439 is a Common Emitter Device Designed For Large signal output amplifier stages in the 225-400 MHz range.
Part No. 2N6439
Datasheet 2N6439 Download
Manufacturer
Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
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2N6439 datasheet page 1 preview

DESCRIPTION

: The ASI

FEATURES

INCLUDE:
● Internal Input Matching Network
● 30:1 Load VSWR Capability
● All Gold Metalization

MAXIMUM RATINGS

VCB 60 V PDISS 146 W @ TC = 25 °C TSTG θJC -65 °C to +200 °C 1.2 °C/W PACKAGE STYLE .500 6L FLG 1 = Collector 2 = Base 3 & 4 = Emitter CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM BVCBO IC = 50 mA 33 BVCES IC = 50 mA 60 BVCBO IE = 5.0 mA 4.0 hFE VCE = 5.0 V IC = 1.0 A 10 COB VCB = 28 V f = 1 MHz GPe VCE = 28 V POUT = 60 W f =225- 400 MHz 7.8 GPe 7.8 ηC VCE = 28 V POUT = 60 W f = 400 MHz 55 Ψ 30:1 TYPICAL MAXIMUM 100 67 75 8.5 10.0 UNITS V V V --pF dB % --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE
● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change witho