2N6439
2N6439 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION
:
The ASI 2N6439 is a mon Emitter Device Designed For Large signal output amplifier stages in the 225-400 MHz range.
FEATURES
INCLUDE:
- Internal Input Matching Network
- 30:1 Load VSWR Capability
- All Gold Metalization
MAXIMUM RATINGS
VCB 60 V
PDISS
146 W @ TC = 25 °C
TSTG θJC
-65 °C to +200 °C 1.2 °C/W
PACKAGE STYLE .500 6L FLG
1 = Collector 2 = Base 3 & 4 = Emitter
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM
BVCBO
IC = 50 m A
BVCES
IC = 50 m A
BVCBO
IE = 5.0 m A
4.0 h FE VCE = 5.0 V IC = 1.0 A
VCB = 28 V f = 1 MHz
GPe
VCE = 28 V
POUT = 60 W f =225- 400 MHz 7.8
GPe 7.8
ηC
VCE = 28 V
POUT = 60 W f = 400 MHz
Ψ...
