Continental Device India 2N6431
NPN SILICON TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Total Device Dissipation @Ta=25ºC PD Derate Above 25ºC Total Device Dissipation @ Tc=25ºC PD Derate Above 25ºC Operating and Storage Junction Tj, Tstg Temperature Range 2N6430 2N6431 200 300 200 300 6 50 500 2.86 1.8 10.3 -65 to +200 UNIT V V V mA mW mW/ºC W mW/ºC ºCELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise )DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage BVCEO* IC=1.0mA,IB=0 2N6430 2N6431 VALUE MIN TYP MAX UNIT 200 V 300 V Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut off Current Emitt