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2N6708 - PNP SILICON PLANAR EPITAXIAL TRANSISTOR

Description

SYMBOL VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage IC Collector Current Continuous PD Total Power Dissipation Tj, Tstg Operating And Storage Junction Temperature Range VALUE 60 45 5 1.5 850 -55 to +150 UNIT V V V A mW ºC ELECTRICAL CHARACTERISTICS (Ta=25 º C

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Datasheet Details

Part number 2N6708
Manufacturer CDIL
File Size 158.56 KB
Description PNP SILICON PLANAR EPITAXIAL TRANSISTOR
Datasheet download datasheet 2N6708 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6708 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25ºC) DESCRIPTION SYMBOL VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage IC Collector Current Continuous PD Total Power Dissipation Tj, Tstg Operating And Storage Junction Temperature Range VALUE 60 45 5 1.
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