Datasheet Details
| Part number | 2N6707 |
|---|---|
| Manufacturer | CDIL |
| File Size | 158.74 KB |
| Description | General Purpose Medium Power Amplifier |
| Datasheet | 2N6707_CDIL.pdf |
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Overview: www.DataSheet4U.com Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6707 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE.
| Part number | 2N6707 |
|---|---|
| Manufacturer | CDIL |
| File Size | 158.74 KB |
| Description | General Purpose Medium Power Amplifier |
| Datasheet | 2N6707_CDIL.pdf |
|
|
|
SYMBOL VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage IC Collector Current Continuous PD Total Power Dissipation Tj, Tstg Operating And Storage Junction Temperature Range VALUE 100 80 5 1.5 850 -55 to +150 UNIT V V V A mW ºC ELECTRICAL CHARACTERISTICS (Ta=25 º C Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION VCEO IC=10mA, IB=0 Collector Emitter Voltage V Collector Base Voltage IC=100µA, IE=0 CBO VEBO Emitter-Base Voltage IE=10µA, IC=0 ICBO VCB=100V, IE=0 Collector Cut off Current IEBO VEB=4V, IC=0 Emitter Cut off Current hFE IC=50mA,VCE=2V DC Current Gain IC=250mA,VCE=2V IC=500mA,VCE=2V VCE(sat) IC=500mA,IB=50mA Collector Emitter Saturation Voltage IC=1A,IB=100mA fT VCE=10V, IC=200mA, Transition Frequency MIN 80 100 5 MAX 0.1 0.1 40 40 25 250 0.5 1 400 UNIT V V V µA µA 50 V V MHz Continental Device India Limited Data Sheet Page 1 of 3 2N6707 TO-237 Plastic Package TO-237 Plastic Package F B H DIM A B C D E F G H K L J MIN.
MAX.
1 2 3 D E 3 2 K 1 D G L A A L SEC AA PIN CONFIGURATION 1.
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| 2N6719 | NPN Transistor |
| 2N6731 | NPN SILICON PLANNAR MEDIUM POWER TRANSISTOR |
| 2N6107 | PLASTIC POWER TRANSISTORS |
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