2N6708 Datasheet PDF | Continental Device India

Continental Device India 2N6708

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	2N6708
Datasheet	2N6708 Download
Manufacturer	Continental Device India
Description	PNP SILICON PLANAR EPITAXIAL TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC)

DESCRIPTION

SYMBOL VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage IC Collector Current Continuous PD Total Power Dissipation Tj, Tstg Operating And Storage Junction Temperature Range VALUE 60 45 5 1.5 850 -55 to +150 UNIT V V V A mW ºC

ELECTRICAL CHARACTERISTICS

(Ta=25 º C Unless Specified Otherwise)

DESCRIPTION

SYMBOL TEST CONDITION VCEO IC=10mA, IB=0 Collector Emitter Voltage V Collector Base Voltage IC=100µA, IE=0 CBO VEBO EmitterBase Voltage IE=10µA, IC=0 ICBO VCB=60V, IE=0 Collector Cut off Current IEBO VEB=4V, IC=0 Emitter Cut off Current hFE IC=50mA,VCE=2V DC Current Gain IC=250mA,VCE=2V IC=500mA,VCE=2V VCE(sat) IC=500mA,IB=50mA Collector Emitter Saturation Voltage IC=1A,IB=100mA fT VCE=10V, IC=50mA, Transition Frequency MIN 45 60 5 MAX 0.1 0.1 40 40 25 250 0.5 1 50 UNIT V V V µA µA V V MHz Continental Device India Limited Data Sheet Page 1 of 3 2N6708 TO-237 Plastic Package TO-237 Plastic Package F B H DIM A B C D E F G H K L J MIN.