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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR SWITCHING DIODE
3 Pin Configuration 1 = NC 2 = ANODE 3 = CATHODE
12
BAL99 SOT-23
MARKING- TF
ABSOLUTE MAXIMUM RATINGS DESCRIPTION
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage Peak Forward Current Total Device Dissipation FR-5 Board* Ta=25 deg C Derate Above=25 deg C Thermal Resistance Junction to Ambient
VR IF PD
Rth(j-a)
70 V 100 mA 225 mW
1.80 mW/deg C 556 deg C/W
Total Device Dissipation Alumina Substrate,** Ta=25 deg C Derate Above=25 deg C Thermal Resistance Junction to Ambient Junction & Storage Temperature
PD
Rth(j-a) Tj, Tstg
300
2.40 417 -55 to +150
mW
mW/deg C deg C/W
deg C
*FR-5=1.0 x 0.75 x 0.062 in. ** Alumina= 0.4 x 0.3 x 0.024 in 99.