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BC182 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS

General Description

SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg

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Datasheet Details

Part number BC182
Manufacturer CDIL
File Size 107.24 KB
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet BC182 Datasheet

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Other Datasheets by CDIL

Part Number Description
BC182A NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC182B NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC183 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC183A NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC183B NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CB E BC182, A, B BC183, A, B, C BC184, B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg BC182 50 60 BC183 30 45 6.0 100 350 2.8 1.0 8.