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BC182 Datasheet

The BC182 is a SILICON NPN TRANSISTOR. Download the datasheet PDF and view key features and specifications below.

Part NumberBC182
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR BC182 is a silicon NPN transistor designed for general purpose applications. MARKING: FULL PART NUMBER TO-92-18R CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Col. z 150 Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz 8.0 MAX 15 15 0.25 0.6 1.2 0.7 500 5.0 UNITS V V V mA mW W °C °C/W °C/W UNITS nA nA V V V V V V V MHz pF pF R0 (26-October 2017) BC182 SILICON NPN TRANSISTOR TO-92-18R CASE - MECHANICAL OUTLINE LEAD CODE: 1) Collector 2) Base 3.
Part NumberBC182
DescriptionNPN Silicon Amplifier Transistors
Manufactureronsemi
Overview BC182, BC182B Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Curren.
* These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value 50 60 6.0 100 350 2.8 Unit Vdc Vdc Vdc mAdc mW mW/.
Part NumberBC182
DescriptionNPN Silicon Epitaxial Planar Transistor
ManufacturerSEMTECH
Overview BC182…BC184 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage BC182. .
Part NumberBC182
DescriptionAMPLIFIER TRANSISTOR
ManufacturerFairchild Semiconductor
Overview BC182 BC182 NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10. 1 TO-92 1. Collector 2. Bas. ts V V V Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)EBO ICBO IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Leakage Current 15 15 40 120 80 nA nA On Characteristics hFE DC Current Gain 500 0.25 0.6 .

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