onsemi BC182
NPN Silicon Amplifier Transistors
| Part No. | BC182 |
|---|---|
| Datasheet | BC182 Download |
| Manufacturer |  onsemi |
| Description | NPN Silicon Amplifier Transistors |
| Buy | Stock & Price |
FEATURES
● These are Pb−Free Devices*MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value 50 60 6.0 100 350 2.8 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C PD 1.0 W Derate above 25°C 8.0 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 357 °C/W Thermal Resistance, Junction−to−Case RqJC 125 °C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. COLLECTOR 1 2 BASE 3 EMITTER TO−92 CASE 29 STYLE 17 123 STRAIGHT LEAD BULK PACK 1 2 3 BENT LEAD TAPE &...
