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BC182, BC182B
Amplifier Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
Symbol VCEO VCBO VEBO
IC PD
Value 50 60 6.0 100 350 2.8
Unit Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C
PD
1.0
W
Derate above 25°C
8.0
mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
357
°C/W
Thermal Resistance, Junction−to−Case
RqJC
125
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
BC182 Datasheet
