Part BC239
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Category Transistor
Manufacturer Continental Device India
Size 349.78 KB
Continental Device India

BC239 Overview

Description

SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage Emitter Base Voltage VCES VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg BC237 45 50 6.0 BC238 25 30 5.0 100 350 2.8 1.0 8.0 - 55 to +150 Rth (j-a) Rth (j-c) 357 125 DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=2mA, IB=0 BC237 Emitter Base Voltage VEBO BC238/BC239 IE=10µA.