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BC856W Datasheet PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Manufacturer: CDIL

Datasheet Details

Part number BC856W
Manufacturer CDIL
File Size 367.68 KB
Description PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Download BC856W Download (PDF)

General Description

SYMBOL BC856W Collector Base Voltage Collector Emitter Voltage VCBO VCEO 80 65 Emitter Base Voltage VEBO 5 Collector Current (DC) IC Peak Collector Current Peak Base Current ICM IBM Power Dissipation upto Tamb=25ºC *Ptot Storage Temperature Tstg Junction Temperature Tj Operating Ambient Temperature Tamb BC857W 50 45 5 100 200 200 200 - 65 to +150 150 - 65 to +150 BC858W 30 30 5 UNITS V V V mA mA mA mW ºC ºC ºC THERMAL RESISTANCE From junction to ambient *Rth (j-a) 625 K/W *Sot-323 standard mounting condition ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless sp

Overview

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC856AW =3A BC856BW =3B BC857W =3H BC857AW =3E BC857BW =3F BC857CW =3G BC858W =3M General Purpose Switching and Amplification.