JCET BC856W
PNP Transistor
FEATURES
y Ideally suited for automatic insertion y For Switching and AF AmplifierAPPLICATIONS
1. BASE 2. EMITTER 3. COLLECTORMAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC* TJ Tstg Parameter Collector-Base Voltage BC856W BC857W BC858W Collector-Emitter Voltage BC856W BC857W BC858W Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -50 -30 -65 -45 -30 -5 -0.1 150 150 -65-150 Unit V V V A mW ℃ ℃ DEVICE MARKING BC856AW= 3A; BC856BW= 3B; BC857AW=3E; BC857BW=3F;BC857CW=3G; BC858AW=3J; BC858BW=3K; BC858CW=3L B,Aug,2013ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage BC856W BC857W BC858W BC856W BC857W B