BC856W - PNP SILICON PLANAR EPITAXIAL TRANSISTORS

CDIL

General Description

SYMBOL BC856W Collector Base Voltage Collector Emitter Voltage VCBO VCEO 80 65 Emitter Base Voltage VEBO 5 Collector Current (DC) IC Peak Collector Current Peak Base Current ICM IBM Power Dissipation upto Tamb=25ºC Ptot Storage Temperature Tstg Junction Temperature Tj Operatin

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BC856W pnp silicon planar epitaxial transistors by CDIL - Datasheet Preview

Datasheet Details

Part number	BC856W
Manufacturer	CDIL
File Size	367.68 KB
Description	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet	BC856W Datasheet

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Other Datasheets by CDIL

Part Number	Description
BC856	SILICON PLANAR EPITAXIAL TRANSISTORS
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BC857W	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
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BC858W	PNP SILICON PLANAR EPITAXIAL TRANSISTORS

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC856AW =3A BC856BW =3B BC857W =3H BC857AW =3E BC857BW =3F BC857CW =3G BC858W =3M General Purpose Switching and Amplification.