Datasheet Details
| Part number | BC856W |
|---|---|
| Manufacturer | CDIL |
| File Size | 367.68 KB |
| Description | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| Datasheet | BC856W-CDIL.pdf |
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Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC856AW =3A BC856BW =3B BC857W =3H BC857AW =3E BC857BW =3F BC857CW =3G BC858W =3M General Purpose Switching and Amplification.
| Part number | BC856W |
|---|---|
| Manufacturer | CDIL |
| File Size | 367.68 KB |
| Description | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| Datasheet | BC856W-CDIL.pdf |
|
|
|
SYMBOL BC856W Collector Base Voltage Collector Emitter Voltage VCBO VCEO 80 65 Emitter Base Voltage VEBO 5 Collector Current (DC) IC Peak Collector Current Peak Base Current ICM IBM Power Dissipation upto Tamb=25ºC *Ptot Storage Temperature Tstg Junction Temperature Tj Operating Ambient Temperature Tamb BC857W 50 45 5 100 200 200 200 - 65 to +150 150 - 65 to +150 BC858W 30 30 5 UNITS V V V mA mA mA mW ºC ºC ºC THERMAL RESISTANCE From junction to ambient *Rth (j-a) 625 K/W *Sot-323 standard mounting condition ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless sp
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| Part Number | Description |
|---|---|
| BC856 | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC857 | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC857W | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC858 | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC858W | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC808 | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC808-16 | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC808-25 | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC808-40 | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC846 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |