BCW89 - SILICON PLANAR EPITAXIAL TRANSISTORS

CDIL

Datasheet Details

Part number	BCW89
Manufacturer	CDIL
File Size	173.01 KB
Description	SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet	BCW89 Datasheet
Additional preview pages of the BCW89 datasheet.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW89 = H3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature D.C. current gain at Tj = 25 °C –IC = 2 mA; —VCE = 5 V Transition frequency at f: 35 MHz –IC = 10 mA; –VCE = 5 V Noise figure at RS = 2 kW –IC = 200 mA; –VCE = 5 V; f = 1 kHz; B = 200 Hz –VCB0 max. –VCE0 max. –ICM max. Ptot max. Tj max. > hFE < 80 V 60 V 200 mA 250 mW 150 ° C 120 260 fT typ.

Published: Jul 18, 2017 |