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BCX38A - NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS

Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Peak Pulse Current Collector Current Continuous Power Dissipation @ Ta=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO ICM IC PD Tj, Tstg VALUE 60 80 10 2 800 625 - 55 to +200 UNITS V V V A mA mW ºC

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Datasheet Details

Part number BCX38A
Manufacturer CDIL
File Size 90.89 KB
Description NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS
Datasheet download datasheet BCX38A Datasheet

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Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS BCX38A BCX38B BCX38C TO-92 Plastic Package EBC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Peak Pulse Current Collector Current Continuous Power Dissipation @ Ta=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO ICM IC PD Tj, Tstg VALUE 60 80 10 2 800 625 - 55 to +200 UNITS V V V A mA mW ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage VCEO (sus) IC=10mA, IB=0 Collector Base Voltage VCBO IC=10µA, IE=0 Emitter Base Voltage VEBO IE=10µA, IC=0 Collector Cut
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