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CDIL

BD244 Datasheet Preview

BD244 Datasheet

PNP PLASTIC POWER TRANSISTOR

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package
BD243, BD243A, BD243B, BD243C
BD244, BD244A, BD244B, BD244C
BD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORS
BD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORS
General Purpose Amplifier and Switching Applications
BF
C
E
12 3
D
G
J
M
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
DIM MIN . MAX.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D 0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J 0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
O DEG 7
4
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 6 A; IB = 1 A
D.C. current gain
IC = 0.3 A; VCE = 4 V
VCBO
VCEO
IC
Ptot
Tj
VCEsat
hFE
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
VCBO
VCEO
VEBO
243 243A 243B 243C
244 244A 244B 244C
max. 45 60 80 100
max. 45 60 80 100
max.
6.0
max.
65
max.
150
V
V
A
W
°C
max.
1.5
V
min.
30
243 243A 243B 243C
244 244A 244B 244C
max. 45 60 80 100
max. 45 60 80 100
max.
5.0
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 3




CDIL

BD244 Datasheet Preview

BD244 Datasheet

PNP PLASTIC POWER TRANSISTOR

No Preview Available !

BD243, BD243A, BD243B, BD243C
BD244, BD244A, BD244B, BD244C
Collector current
Collector current (Peak)
Base current
Total power dissipation upto TC=25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to case
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCE = 30 V
IB = 0; VCE = 60 V
VBE = 0; VCE = VCEO
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 30 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 6 A; IB = 1 A
Base emitter on voltage
IC = 6 A; VCE = 4 V
D.C. current gain
IC = 0.3 A; VCE = 4 V
IC = 3 A; VCE = 4 V
Small signal current gain
IC = 0.5A; VCE = 10V; f = 1 KHz
Transition frequency
IC = 0.5 A; VCE = 10 V; f = 1 MHz
IC
IC
IB
Ptot
Tj
Tstg
Rth j–c
max.
max.
max.
max.
max.
6.0
10
2.0
65
150
–65 to +150
1.92
A
A
A
W
°C
ºC
°C/W
243 243A 243B 243C
244 244A 244B 244C
ICEO
ICEO
ICES
max. 0.7 0.7 – – mA
max. – – 0.7 0.7 mA
max.
0.4
mA
IEBO
max.
1.0
mA
VCEO(sus)* min. 45
VCBO
min. 45
VEBO
min.
60 80 100 V
60 80 100 V
5.0 V
VCEsat* max.
VBE(on)* max.
hFE* min.
hFE* min.
hfe min.
fT (1)
min.
1.5
2.0
30
15
20
3
V
V
MHz
* Pulse Test: Pulse width 300 µs; duty cycle 2%.
(1) fT = |hfe|• ftest
Continental Device India Limited
Data Sheet
Page 2 of 3


Part Number BD244
Description PNP PLASTIC POWER TRANSISTOR
Maker CDIL
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BD244 Datasheet PDF





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