BF823 - SILICON EPITAXIAL TRANSISTORS

This page provides the datasheet information for the BF823, a member of the BF821 SILICON EPITAXIAL TRANSISTORS family.

CDIL

Datasheet Details

Part number	BF823
Manufacturer	CDIL
File Size	77.34 KB
Description	SILICON EPITAXIAL TRANSISTORS
Datasheet	BF823 Datasheet
Additional preview pages of the BF823 datasheet.

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Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector–emitter voltage (RBE = 2,7 kW ) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature D.C. current gain –IC = 25 mA; –VCE = 20 V Feedback capacitance at f = 1 MHz · IC = 0; –VCE = 30 V Transition frequency at f = 35 MHz –IC = 10 mA; –VCE = 10 V BF821 –VCB0 max. –VCE0 max. –VCER max. –ICM max. Ptot max. Tj max.

Published: Jul 19, 2017 |