Download the BZX79C4V7 datasheet PDF.
This datasheet also covers the BZX79C2V4 variant, as both devices belong to the same silicon glass passivated 0.5watt zener diodes family and are provided as variant models within a single manufacturer datasheet.
General Description
SYMBOL VALUE UNIT PD 500 mW Power Dissipation PDS 5.0 W Surge Power Dissipation @ tp=83ms Tj, Tstg -65 to +200 deg C Operating & Storage Junction Temperature Range Rth(j-a) 300 deg C/W Thermal Resistance Junction to Ambient (1) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified) VF 1
Full PDF Text Transcription for BZX79C4V7 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BZX79C4V7. For precise diagrams, tables, and layout, please refer to the original PDF.
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES BZX79C 2V4 to 51V DO-35 500mW The...
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LASS PASSIVATED 0.5WATT ZENER DIODES BZX79C 2V4 to 51V DO-35 500mW These Zeners Are Best Suited for Industrial Purpose, Military & Space Applications when Hermetcally Sealed in Glass with Double Stud This Glass Passivated Chip Provides Excellent Stability & Reliability. ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION SYMBOL VALUE UNIT PD 500 mW Power Dissipation PDS 5.0 W Surge Power Dissipation @ tp=83ms Tj, Tstg -65 to +200 deg C Operating & Storage Junction Temperature Range Rth(j-a) 300 deg C/W Thermal Resistance Junction to Ambient (1) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified) VF 1.
BZX79C4V7 Datasheet
