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C45C11 Datasheet PNP SILICON EPITAXIAL POWER TRANSISTORS

Manufacturer: CDIL

Download the C45C11 datasheet PDF. This datasheet also includes the C45C5 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (C45C5-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number C45C11
Manufacturer CDIL
File Size 205.61 KB
Description PNP SILICON EPITAXIAL POWER TRANSISTORS
Datasheet download datasheet C45C11 Datasheet

General Description

SYMBOL C45C5 C45C11 Collector -Emitter Voltage VCEO 45 80 Collector -Emitter Voltage VCES 55 90 Emitter Base Voltage VEBO 55 Collector Current Continuous IC 44 Peak* ICM 6 6 Base Current IB 2 2 Power Dissipation @ Ta=25 deg C PD 1.67 1.67 Power Dissipation @ Tc=25 deg C 30 30 Operating and Storage Junction Tj, Tstg -55 to +150 55 to +150 Temprature Range THERMAL RESISTANCE Junction to Ambient Rth(j-a) 75 75 Junction to Case Rth(j-c) 4.2 4.2 ELECTRICAL CHARACTERISTICS (TC=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP Collector Emitter Sustaining Voltage VCEO(sus)* IC=100mA, IB=0 C45C5 45 - C45C11 80 - Collector Cutt off Current ICES VCE=Rated VCES - - Emitte

Overview

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTORS C45C5,11 TO-220 Designed for Various Specific and General Purpose Applications.