Datasheet Details
| Part number | C45C5 |
|---|---|
| Manufacturer | CDIL |
| File Size | 205.61 KB |
| Description | PNP SILICON EPITAXIAL POWER TRANSISTORS |
| Datasheet |
 C45C5 Datasheet
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| Part number | C45C5 |
|---|---|
| Manufacturer | CDIL |
| File Size | 205.61 KB |
| Description | PNP SILICON EPITAXIAL POWER TRANSISTORS |
| Datasheet |
C45C5 Datasheet
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SYMBOL C45C5 C45C11 Collector -Emitter Voltage VCEO 45 80 Collector -Emitter Voltage VCES 55 90 Emitter Base Voltage VEBO 55 Collector Current Continuous IC 44 Peak* ICM 6 6 Base Current IB 2 2 Power Dissipation @ Ta=25 deg C PD 1.67 1.67 Power Dissipation @ Tc=25 deg C 30 30 Operating and Storage Junction Tj, Tstg -55 to +150 55 to +150 Temprature Range THERMAL RESISTANCE Junction to Ambient Rth(j-a) 75 75 Junction to Case Rth(j-c) 4.2 4.2 ELECTRICAL CHARACTERISTICS (TC=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP Collector Emitter Sustaining Voltage VCEO(sus)* IC=100mA, IB=0 C45C5 45 - C45C11 80 - Collector Cutt off Current ICES VCE=Rated VCES - - Emitte
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTORS C45C5,11 TO-220 Designed for Various Specific and General Purpose Applications.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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C45C5 | Power Transistors | RECTRON |
| Part Number | Description |
|---|---|
| C45C11 | PNP SILICON EPITAXIAL POWER TRANSISTORS |
| C45C8 | PNP PLASTIC POWER TRANSISTOR |