Datasheet4U Logo Datasheet4U.com

CMBT2222A - SILICON PLANAR EPITAXIAL TRANSISTORS

Download the CMBT2222A datasheet PDF. This datasheet also covers the CMBT2222 variant, as both devices belong to the same silicon planar epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CMBT2222_CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CMBT2222A
Manufacturer CDIL
File Size 174.66 KB
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet CMBT2222A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CMBT200 PNP EPITAXIAL PLANAR SILICON TRANSISTOR Continental Device India Limited
CMBT200A PNP EPITAXIAL PLANAR SILICON TRANSISTOR Continental Device India Limited
CMBT3904E SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS Central Semiconductor
CMBT3906E SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS Central Semiconductor
CMBTA13 NPN Small-Signal Darlington Transistors Rectron Semiconductor

Other Datasheets by CDIL

Part Number Description
CMBT2222 SILICON PLANAR EPITAXIAL TRANSISTORS
CMBT2369 SILICON PLANAR EPITAXIAL TRANSISTORS
CMBT2484 SILICON PLANAR EPITAXIAL TRANSISTORS
CMBT2907 SILICON PLANAR EPITAXIAL TRANSISTORS
CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS

Full PDF Text Transcription

Click to expand full text
www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2222 CMBT2222A SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking CMBT2222 = lB CMBT2222A = lP PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS CMBT2222 CMBT2222A Collector–base voltage (open ernitter) VCB0 Collector–emitter voltage (open base) VCE0 Emitter base voltage (open collector) VEB0 Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot D.C. current gain hFE IC = 150mA; VCE = 10V hFE lC = 500mA; VCE = 10V Transition frequency at f = 100 MHz fT IC = 20 mA; VCE = 20 V max. max. max. max. max.
Published: |