MJE350
MJE350 is PNP EPITAXIAL SILICON POWER TRANSISTOR manufactured by Continental Device India.
DESCRIPTION
Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC
Derate above 25ºC Power Dissipation @ Tc=25ºC
Derate above 25ºC Operating And Storage Junction Temperature Range
SYMBOL VCEO VCBO VEBO IC PD
Tj, Tstg
VALUE 300 300 3.0 500 1.25 10 20 0.16
- 65 to +150
UNIT V V V m A W m W/ºC W
W/ºC
ºC
THERMAL CHARACTERISTICS Junction to Ambient in free air
Junction to Case
Rth (j-a) Rth (j-c)
100 6.25
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Sustaining Voltage
VCEO (sus)
IC=1m A, IB=0
Collector Cut Off...