Datasheet Details
| Part number | MJE350 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.36 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJE350-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | MJE350 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.36 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJE350-InchangeSemiconductor.pdf |
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·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·DC Current Gain- : hFE = -100(Min) @ IC= -50mA ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA ·Complement to the NPN MJE340 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -3 V IC Collector Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature -0.5 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.25 ℃/W MJE350 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1.0mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1.0mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJE350 | Medium Power PNP Transistors | Multicomp |
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MJE350 | 0.5 AMPERE POWER TRANSISTOR | Motorola |
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MJE350 | PNP Epitaxial Silicon Transistor | Fairchild |
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MJE350 | COMPLEMETARY SILICON POWER TRANSISTORS | ST Microelectronics |
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MJE350 | POWER TRANSISTOR | Central Semiconductor |
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