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MJE350G

Manufacturer: onsemi
MJE350G datasheet preview

Datasheet Details

Part number MJE350G
Datasheet MJE350G-ONSemiconductor.pdf
File Size 130.96 KB
Manufacturer onsemi
Description Plastic Medium-Power PNP Silicon Transistor
MJE350G page 2 MJE350G page 3

MJE350G Overview

MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability.

MJE350G Key Features

  • VCEO(sus) 300 ICBO
  • 100 100 mAdc
  • mAdc Vdc Symbol Min Max Unit
  • Rev. 17
  • 55°C 1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 10 V
  • 2.8 5.0 7.0 10 qVB for VBE
  • 55°C to + 25°C 20 30 50 70 100 IC, COLLECTOR

MJE350 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Multicomp Logo MJE350 Medium Power PNP Transistors Multicomp
Motorola Logo MJE350 0.5 AMPERE POWER TRANSISTOR Motorola
Fairchild Logo MJE350 PNP Epitaxial Silicon Transistor Fairchild
ST Microelectronics Logo MJE350 COMPLEMETARY SILICON POWER TRANSISTORS ST Microelectronics
Inchange Semiconductor Logo MJE350 Silicon PNP Power Transistor Inchange Semiconductor
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