• Part: MJE350
  • Description: PNP EPITAXIAL SILICON POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 73.06 KB
Download MJE350 Datasheet PDF
Continental Device India
MJE350
MJE350 is PNP EPITAXIAL SILICON POWER TRANSISTOR manufactured by Continental Device India.
DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD Tj, Tstg VALUE 300 300 3.0 500 1.25 10 20 0.16 - 65 to +150 UNIT V V V m A W m W/ºC W W/ºC ºC THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 100 6.25 ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage VCEO (sus) IC=1m A, IB=0 Collector Cut Off...