Datasheet Details
| Part number | MJE350 |
|---|---|
| Manufacturer | CDIL |
| File Size | 73.06 KB |
| Description | PNP EPITAXIAL SILICON POWER TRANSISTOR |
| Datasheet | MJE350-CDIL.pdf |
|
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Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTOR MJE350 TO126 Plastic Package ECB Designed for use in Line-Operated Applications sush as.
| Part number | MJE350 |
|---|---|
| Manufacturer | CDIL |
| File Size | 73.06 KB |
| Description | PNP EPITAXIAL SILICON POWER TRANSISTOR |
| Datasheet | MJE350-CDIL.pdf |
|
|
|
Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 300 300 3.0 500 1.25 10 20 0.16 - 65 to +150 UNIT V V V mA W mW/ºC W W/ºC ºC THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 100 6.25 ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage VCEO (sus) IC=1mA, IB=0 Collector Cut Off Current ICBO
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJE350 | Medium Power PNP Transistors | Multicomp |
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MJE350 | 0.5 AMPERE POWER TRANSISTOR | Motorola |
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MJE350 | PNP Epitaxial Silicon Transistor | Fairchild |
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MJE350 | COMPLEMETARY SILICON POWER TRANSISTORS | ST Microelectronics |
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MJE350 | Silicon PNP Power Transistor | Inchange Semiconductor |
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