MJE350 - PNP EPITAXIAL SILICON POWER TRANSISTOR

CDIL

General Description

VALUE 300 300 3.

MJE350 pnp epitaxial silicon power transistor by CDIL - Datasheet Preview

Datasheet Details

Part number	MJE350
Manufacturer	CDIL
File Size	73.06 KB
Description	PNP EPITAXIAL SILICON POWER TRANSISTOR
Datasheet	MJE350 Datasheet

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Full PDF Text Transcription (Reference)

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTOR MJE350 TO126 Plastic Package ECB Designed for use in Line-Operated Applications sush as Low Power, Line- Operated Series Pass and Switching Regulators ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 300 300 3.0 500 1.25 10 20 0.16 - 65 to +150 UNIT V V V mA W mW/ºC W W/ºC ºC THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 100 6.