Continental Device India MJE350
PNP EPITAXIAL SILICON POWER TRANSISTOR
| Part No. | MJE350 |
|---|---|
| Datasheet | MJE350 Download |
| Manufacturer |  Continental Device India |
| Description | PNP EPITAXIAL SILICON POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
sush as Low Power, Line- Operated Series Pass and Switching RegulatorsABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 300 300 3.0 500 1.25 10 20 0.16 - 65 to +150 UNIT V V V mA W mW/ºC W W/ºC ºC THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 100 6.25ELECTRICAL CHARACTERISTICS
(Tc=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage VCEO (sus) IC=1mA, IB=0 Collector Cut Off Current ICBO
