NPN SILICON PLANAR EPITAXIAL TRANSISTORS
MPSA05,MPSA06
MPSA55,MPSA56
TO-92
Plastic Package
EBC
ELECTRICAL CHARACTERISTICS (Ta=25°C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector Emitter Voltage
VCEO * IC=1mA,IB=0
MPSA05/55
MPSA06/56
Emitter-Base Voltage
VEBO IE=100uA, IC=0
Collector-Cut off Current
ICBO
MPSA05/55
VCB=60V, IE = 0
MPSA06/56
VCB=80V, IE = 0
Collector-Cut off Current
ICEO VCE=60V,IB =0
Collector-Emitter (sat) Voltage
VCE(sat) IC=100mA,IB=10mA
Base-Emitter(on) Voltage
VBE(on) IC=100mA,VCE=1V
DC Current Gain
hFE VCE=1V,IC=10mA
VCE=1V,IC=100mA
60
80
4.0
100
100
ELECTRICAL CHARACTERISTICS (Ta=25°C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION MIN
DYNAMIC CHARACTERISTICS
TYP
Transition Frequency
NPN fT** IC=10mA, VCE=2V
f=100MHz
PNP
IC=100mA, VCE=1V
f=100MHz
100
50
*Pulse Test : Pulse Width < 300us, Duty Cycle < 2%.
** fT is defined as the frequency at which IhfeI extrapolates to unity.
MAX
UNITS
V
V
V
0.1 uA
0.1 uA
0.1 uA
0.25 V
1.2 V
uA
MAX
UNITS
MHz
MHz
Continental Device India Limited
Data Sheet
Page 2 of 4
