MPSA56 Datasheet

The MPSA56 is a EPITAXIAL PLANAR PNP TRANSISTOR.

Datasheet4U Logo
Part NumberMPSA56
ManufacturerKEC
Overview SEMICONDUCTOR TECHNICAL DATA AUDIO FREQUENCY AMPLIFIER APPLICATIONS. FEATURES ᴌComplementary to MPSA06. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Volta. ᴌComplementary to MPSA06. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC IE PC Tj Tstg RATING -80 -80 -5.
Part NumberMPSA56
DescriptionPNP Silicon Amplifier Transistor
ManufacturerMicro Commercial Components
Overview MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Halogen free available upon request.
* Halogen free available upon request by adding suffix "-HF"
* Capable of 1.5Watts of Power Dissipation.
* Collector-current 500mA
* Collector-base Voltage 80V
* Operating and storage junction temperature range: -55OC to +150OC x Marking:MPSA55,MPSA56
* Lead Free Finish/RoHS Compliant ("P" Suffix d.
Part NumberMPSA56
DescriptionAmplifier Transistors
Manufactureronsemi
Overview MPSA05, MPSA06, MPSA55, MPSA56 MPSA06 and MPSA56 are Preferred Devices Amplifier Transistors Voltage and Current are Negative for PNP Transistors http://onsemi.com NPN COLLECTOR . TO
*92 Shipping 5000 Units/Box 2000/Tape & Reel 2000/Ammo Pack 5000 Units/Box 2000/Tape & Reel 2000/Ammo Pack 2000/Ammo Pack 5000 Units/Box 2000/Tape & Reel 5000 Units/Box 2000/Tape & Reel 2000/Ammo Pack 2000/Ammo Pack VEBO IC PD 4.0 500 625 5.0 Vdc mAdc mW mW/°C Watts mW/°C °C MPSA05 MPSA05RLRA.
Part NumberMPSA56
DescriptionSilicon PNP Transistor
ManufacturerNTE Electronics
Overview MPSA55 & MPSA56 Silicon PNP Transistor General Purpose Amplifier Absolute Maximum Ratings: Collector−Emitter Voltage, VCES MPSA55 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . 500mA Total Device Dissipation (TA = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C Total De.