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2SC5704 Datasheet Preview

2SC5704 Datasheet

NPN SILICON RF TRANSISTOR

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NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR
LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
FEATURES
Ideal for low noise high-gain amplification and oscillation at 3 GHz or over
NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz
6-pin lead-less minimold package
ORDERING INFORMATION
Part Number
NE662M16-A
2SC5704-A
NE662M16-T3-A
2SC5704-T3-A
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
Ratings
15
3.3
1.5
35
115
150
65 to +150
Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy substrate
Unit
V
V
V
mA
mW
C
C
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. P15364EJ1V0DS00 (1st edition)
Date Published April 2001 NS CP(K)




CEL

2SC5704 Datasheet Preview

2SC5704 Datasheet

NPN SILICON RF TRANSISTOR

No Preview Available !

NE662M16 / 2SC5704
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current
DC Current Gain
IEBO VBE = 1 V, IC = 0 mA
hFE Note 1 VCE = 2 V, IC = 5 mA
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Maximum Available Power Gain
Maximum Stable Power Gain
fT VCE = 3 V, IC = 30 mA, f = 2 GHz
S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz
NF VCE = 2 , IC = 5 mA, f = 2 Hz,
ZS = Zopt
Cre Note 2 VCB = 2 V, IE = 0 mA, f = 1 MHz
MAG Note 3 VCE = 2 V, IC = 20 mA, f = 2 GHz
MSG Note 4 VCE = 2 V, IC = 20 mA, f = 2 GHz
Gain 1 dB Compression Output Power
3rd Order Intermodulation Distortion
Output Intercept Point
PO (1 dB)
OIP3
VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 2 V, IC = 20 mA, f = 2 GHz
MIN. TYP. MAX. Unit
– – 200 nA
– – 200 nA
50 70 100
20.0 25.0 GHz
14.0 17.0
dB
1.1 1.5 dB
0.14 0.24
pF
19.0
dB
20.0
dB
11.0 dBm
22.0 dBm
Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2%
2. Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
3. MAG = S21 (k (k2 1) )
S12
4. MSG = S21
S12
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB
zC
50 to 100
2 Data Sheet P15364EJ1V0DS


Part Number 2SC5704
Description NPN SILICON RF TRANSISTOR
Maker CEL
Total Page 21 Pages
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